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? semiconductor components industries, llc, 2011 november, 2011 ? rev. 5 1 publication order number: ncv8403/d ncv8403, ncv8403a self-protected low side driver with temperature and current limit 42 v, 14 a, single n ? channel, sot ? 223 ncv8403/a is a three terminal protected low-side smart discrete device. the protection features in clude overcurrent, overtemperature, esd and integrated drain-to-gate clamping for overvoltage protection. this device offers protection an d is suitable for harsh automotive environments. features ? short circuit protection ? thermal shutdown with automatic restart ? over voltage protection ? integrated clamp for inductive switching ? esd protection ? dv/dt robustness ? analog drive capability (logic level input) ? aec ? q101 qualified and ppap capable ? ncv prefix for automotive and other applications requiring unique site and control change requirements ? these devices are pb ? free and are rohs compliant typical applications ? switch a variety of resistive, inductive and capacitive loads ? can replace electromechanical relays and discrete circuits ? automotive / industrial drain source temperature limit gate input current limit current sense overvoltage protection esd protection http://onsemi.com v dss (clamped) r ds(on) typ i d max (limited) 42 v 53 m @ 10 v 15 a sot ? 223 case 318e style 3 marking diagram a = assembly location y = year w, ww = work week xxxxx = v8403 or 8403a g or = pb ? free package 1 (note: microdot may be in either location) 1 ayw xxxxx 23 4 gate drain source drain 2 3 4 1 2 3 4 dpak case 369c yww xxxxxg see detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. ordering information
ncv8403, ncv8403a http://onsemi.com 2 maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain ? to ? source voltage internally clamped v dss 42 vdc gate ? to ? source voltage v gs 14 vdc drain current continuous i d internally limited total power dissipation @ t a = 25 c (note 1) @ t a = 25 c (note 2) p d 1.13 1.56 w thermal resistance ? sot ? 223 version junction ? to ? case junction ? to ? ambient (note 1) junction ? to ? ambient (note 2) thermal resistance ? dpak version junction ? to ? case junction ? to ? ambient (note 1) junction ? to ? ambient (note 2) r jc r ja r ja r jc r ja r ja 12 110 80 2.5 95 50 c/w single pulse inductive load switching energy (v dd = 25 vdc, v gs = 5.0 v, i l = 2.8 a, l = 120 mh, r g = 25 ) e as 470 mj load dump voltage (v gs = 0 and 10 v, r i = 2.0 , r l = 4.5 , t d = 400 ms) v ld 55 v operating junction temperature t j ? 40 to 150 c storage temperature t stg ? 55 to 150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. surface mounted onto minimum pad size (0.412 square) fr4 pcb, 1 oz cu. 2. mounted onto 1 square pad size (1.127 square) fr4 pcb, 1 oz cu. drain source gate vds vgs i d i g + ? + ? figure 1. voltage and current convention
ncv8403, ncv8403a http://onsemi.com 3 mosfet electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain ? to ? source clamped breakdown voltage (v gs = 0 vdc, i d = 250 adc) (v gs = 0 vdc, i d = 250 adc, t j = ? 40 c to 150 c) (note 3) v (br)dss 42 40 46 45 51 51 vdc vdc zero gate voltage drain current (v ds = 32 vdc, v gs = 0 vdc) (v ds = 32 vdc, v gs = 0 vdc, t j = 150 c) (note 3) i dss ? ? 0.6 2.5 5.0 ? adc gate input current (v gs = 5.0 vdc, v ds = 0 vdc) i gss ? 50 125 adc on characteristics gate threshold voltage (v ds = v gs , i d = 1.2 madc) threshold temperature coefficient (negative) v gs(th) 1.0 ? 1.7 5.0 2.2 ? vdc mv/ c static drain ? to ? source on ? resistance (note 4) (v gs = 10 vdc, i d = 3.0 adc, t j @ 25 c) (v gs = 10 vdc, i d = 3.0 adc, t j @ 150 c) (note 3) r ds(on) ? ? 53 95 68 123 m static drain ? to ? source on ? resistance (note 4) (v gs = 5.0 vdc, i d = 3.0 adc, t j @ 25 c) (v gs = 5.0 vdc, i d = 3.0 adc, t j @ 150 c) (note 3) r ds(on) ? ? 63 105 76 135 m source ? drain forward on voltage (i s = 7.0 a, v gs = 0 v) v sd ? 0.95 1.1 v switching characteristics (note 3) turn ? on time (10% v in to 90% i d ) v in = 0 v to 5 v, v dd = 25 v i d = 1.0 a, ext r g = 2.5 t on 44 s s turn ? off time (90% v in to 10% i d ) t off 84 turn ? on time (10% v in to 90% i d ) v in = 0 v to 10 v, v dd = 25 v , i d = 1.0 a, ext r g = 2.5 t on 15 turn ? off time (90% v in to 10% i d ) t off 116 slew ? rate on (20% v ds to 50% v ds ) v in = 0 to 10 v, v dd = 12 v, r l = 4.7 ? dv ds /dt on 2.43 v s slew ? rate off (80% v ds to 50% v ds ) dv ds /dt off 0.83 self protection characteristics (t j = 25 c unless otherwise noted) (note 5) current limit v gs = 5.0 v, v ds = 10 v v gs = 5.0 v, t j = 150 c (note 3) i lim 10 5.0 15 10 20 15 adc current limit v gs = 10 v, v ds = 10 v v gs = 10 v, t j = 150 c (note 3) i lim 12 8.0 17 13 22 18 adc temperature limit (turn ? off) v gs = 5.0 vdc (note 3) t lim(off) 150 175 200 c thermal hysteresis v gs = 5.0 vdc t lim(on) ? 15 ? c temperature limit (turn ? off) v gs = 10 vdc (note 3) t lim(off) 150 165 185 c thermal hysteresis v gs = 10 vdc t lim(on) ? 15 ? c gate input characteristics (note 3) device on gate input current v gs = 5 v i d = 1.0 a i gon 50 a v gs = 10 v i d = 1.0 a 400 current limit gate input current v gs = 5 v, v ds = 10 v i gcl 0.1 ma v gs = 10 v, v ds = 10 v 0.6 thermal limit fault gate input current v gs = 5 v, v ds = 10 v i gtl 0.45 ma v gs = 10 v, v ds = 10 v 1.5 esd electrical characteristics (t j = 25 c unless otherwise noted) (note 3) electro ? static discharge capability human body model (hbm) esd 4000 ? ? v electro ? static discharge capability machine model (mm) esd 400 ? ? v 3. not subject to production testing. 4. pulse test: pulse width = 300 s, duty cycle = 2%. 5. fault conditions are viewed as beyond the normal operating range of the part.
ncv8403, ncv8403a http://onsemi.com 4 typical performance curves figure 2. single pulse maximum switch ? off current vs. load inductance figure 3. single ? pulse maximum switching energy vs. load inductance l (mh) l (mh) 100 10 1 10 100 10 100 1000 figure 4. single pulse maximum inductive switch ? off current vs. time in clamp figure 5. single ? pulse maximum inductive switching energy vs. time in clamp time in clamp (ms) time in clamp (ms) 10 1 1 10 100 10 1 100 1000 ilmax (a) emax (mj) ilmax (a) emax (mj) t jstart = 25 c t jstart = 150 c t jstart = 25 c t jstart = 150 c t jstart = 25 c t jstart = 150 c t jstart = 25 c t jstart = 150 c 150 c v ds (v) v gs (v) 5 4 3 2 1 0 0 5 10 20 25 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0 5 10 15 20 i d (a) i d (a) 15 v gs = 2.5 v 3 v 4 v 5 v 6 v 7 v 8 v 9 v 10 v ? 40 c 25 c 100 c figure 6. on ? state output characteristics figure 7. transfer characteristics t a = 25 c v ds = 10 v
ncv8403, ncv8403a http://onsemi.com 5 typical performance curves figure 8. r ds(on) vs. gate ? source voltage figure 9. r ds(on) vs. drain current v gs (v) i d (a) r ds(on) (m ) r ds(on) (m ) ? 40 c 25 c 100 c 150 c ? 40 c, v gs = 5 v ? 40 c, v gs = 10 v 25 c, v gs = 5 v 25 c, v gs = 10 v 100 c, v gs = 5 v 100 c, v gs = 10 v 150 c, v gs = 5 v figure 10. normalized r ds(on) vs. temperature figure 11. current limit vs. gate ? source voltage t ( c) v gs (v) 120 100 80 40 20 0 ? 20 ? 40 0.50 0.75 1.00 1.25 1.50 1.75 2.00 normalized r ds(on) i lim (a) 60 ? 40 c 25 c 100 c 140 v gs = 5 v v gs = 10 v 25 50 75 100 125 150 345678910 20 30 50 60 70 80 90 100 13 5 7 9 150 c, v gs = 10 v 5 10 15 20 25 56 78 910 150 c i d = 3 a 246810 40 i d = 5 a v ds = 10 v figure 12. current limit vs. junction temperature figure 13. drain ? to ? source leakage current t j ( c) v ds (v) 40 35 30 25 20 15 10 0.00001 0.001 0.01 0.1 1 10 100 i lim (a) i dss ( a) ? 40 c 25 c 100 c 150 c 5 10 15 20 25 ? 40 ? 20 0 20 40 60 80 100 120 140 v gs = 5 v v gs = 10 v v ds = 10 v v gs = 0 v 0.0001
ncv8403, ncv8403a http://onsemi.com 6 typical performance curves figure 14. normalized threshold voltage vs. temperature figure 15. source ? drain diode forward characteristics t ( c) i s (a) 140 100 60 40 20 0 ? 20 ? 40 0.6 0.7 0.8 0.9 1.0 1.1 1.2 8 7 6 5 4 3 2 1 0.5 0.6 0.7 0.8 0.9 1.0 normalized v gs(th) (v) v sd (v) 80 120 910 ? 40 c 25 c 100 c 150 c figure 16. resistive load switching time vs. gate ? source voltage figure 17. resistive load switching drain ? source voltage slope vs. gate ? source voltage v gs (v) v gs (v) 10 9 8 7 6 5 4 3 0 50 100 150 250 10 9 8 7 6 5 4 3 0 0.5 1.0 1.5 3.0 time ( s) drain ? source voltage slope (v/ s) t d(off) t d(on) t f t r ? dv ds /d t(on) dv ds /d t(off) i d = 1.2 ma v ds = v gs 200 v gs = 0 v v dd = 25 v i d = 5 a r g = 0 2.0 2.5 v dd = 25 v i d = 5 a r g = 0 figure 18. resistive load switching time vs. gate resistance figure 19. drain ? source voltage slope during turn on and turn off vs. gate resistance r g ( )r g ( ) 2000 1500 1000 500 0 0 25 50 75 100 2000 1500 1000 500 0 0.50 0.75 1.00 1.25 2.00 2.50 time ( s) drain ? source voltage slope (v/ s) t d(on) , v gs = 5 v t d(off) , v gs = 5 v t r , v gs = 5 v t f , v gs = 5 v t d(on) , v gs = 10 v t d(off) , v gs = 10 v t r , v gs = 10 v t f , v gs = 10 v 1.50 1.75 2.25 ? dv ds /d t(on) , v gs = 5 v dv ds /d t(off) , v gs = 5 v ? dv ds /d t(on) , v gs = 10 v dv ds /d t(off) , v gs = 10 v v dd = 25 v i d = 5 a v dd = 25 v i d = 5 a
ncv8403, ncv8403a http://onsemi.com 7 typical performance curves 0.01 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse time (sec) r(t) c/w single pulse 50% duty cycle 20% 10% 5% 2% 1% 0.000001 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse time (sec) r(t) c/w single pulse 50% duty cycle 20% 10% 5% 2% 1% 0.000001 copper heat spreader area (mm 2 ) r ja ( c/w) pcb cu thickness, 1.0 oz 25 50 75 100 125 150 300 400 500 600 700 800 figure 20. r ja vs. copper area ? sot ? 223 0 100 200 pcb cu thickness, 2.0 oz copper heat spreader area (mm 2 ) r ja ( c/w) pcb cu thickness, 1.0 oz 25 50 75 100 125 150 300 400 500 600 700 800 figure 21. r ja vs. copper area ? dpak 0 100 200 pcb cu thickness, 2.0 oz figure 22. transient thermal resistance ? sot ? 223 version figure 23. transient thermal resistance ? dpak version
ncv8403, ncv8403a http://onsemi.com 8 test circuits and waveforms dut g d s rl vdd ids vin figure 24. resistive load switching test circuit rg + ? td(on) tr vin ids td(off) tf 10% 10% 90% 90% figure 25. resistive load switching waveforms
ncv8403, ncv8403a http://onsemi.com 9 test circuits and waveforms vdd ids vin l vds tp figure 26. inductive load switching test circuit dut g d s rg + ? 0 v 5 v t av vin ids vds t p v ds(on) i pk 0 vdd v (br)dss figure 27. inductive load switching waveforms
ncv8403, ncv8403a http://onsemi.com 10 ordering information device package shipping ? ncv8403stt1g sot ? 223 (pb ? free) 1000 / tape & reel ncv8403stt3g sot ? 223 (pb ? free) 4000 / tape & reel ncv8403dtrkg dpak (pb ? free) 2500 / tape & reel NCV8403ASTT1G sot ? 223 (pb ? free) 1000 / tape & reel ncv8403astt3g sot ? 223 (pb ? free) 4000 / tape & reel ncv8403adtrkg dpak (pb ? free) 2500 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
ncv8403, ncv8403a http://onsemi.com 11 package dimensions sot ? 223 (to ? 261) case 318e ? 04 issue n style 3: pin 1. gate 2. drain 3. source 4. drain a1 b1 d e b e e1 4 123 0.08 (0003) a l1 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inch. 1.5 0.059 mm inches scale 6:1 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.3 0.091 2.0 0.079 soldering footprint h e dim a min nom max min millimeters 1.50 1.63 1.75 0.060 inches a1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 d 6.30 6.50 6.70 0.249 e 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 nom max l1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 h e ? ? e1 0 1 0 0 1 0 l l 0.20 ??? ??? 0.008 ??? ???
ncv8403, ncv8403a http://onsemi.com 12 package dimensions dpak (single gauge) case 369c issue d b d e b3 l3 l4 b2 e m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.030 0.045 0.76 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 12 3 4 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 mm inches scale 3:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.108 ref 2.74 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. ncv8403/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative

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